Factors governing the photoluminescence yield of erbium implanted silicon

Materials Research Society Symposium - Proceedings

Volumn 422, Issue , 1996, Pages 101-111

  Jantsch, W ^a   Przybylinska, H ^a   Skierbiszewski, C ^a   Lanzerstorfer, S ^a   Palmetshofer, L ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DOPING (ADDITIVES); ELECTRIC EXCITATION; EXCITONS; HIGH TEMPERATURE EFFECTS; HYDROSTATIC PRESSURE; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SILICON;

ERBIUM IMPLANTED SILICON; EXCITATION TRANSFER; EXCITON RECOMBINATION; HIGH RESOLUTION PHOTOLUMINESCENCE;

ERBIUM;

EID: 0030386495     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-422-101     Document Type: Conference Paper

References (22)