Nucleation and growth dependence of ALD WNC on substrate surface condition

Materials Research Society Symposium Proceedings

Volumn 812, Issue , 2004, Pages 141-146

  Abell, Thomas ^a   Schuhmacher, Jörg ^b   Travaly, Youssef ^b   Maex, Karen ^b,c  

^a Intel Corporation Belgium   (Belgium)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISORPTION; DIELECTRIC FILMS; GROWTH KINETICS; NUCLEATION; POROSITY; POROUS MATERIALS; SUBSTRATES; SURFACE CHEMISTRY; SURFACE ROUGHNESS; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN COMPOUNDS;

ATOMIC LAYER DEPOSITION (ALD); MESOPOROUS FILMS; PLASMA TREATMENTS; POROUS STRUCTURE;

DEPOSITION;

EID: 12844263444     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-812-f2.7     Document Type: Conference Paper

References (6)

1. International Technology Roadmap for Semiconductors, p75, 2002 Update
2. M.Leskela, M.Ritala, Thin Solid Films 409, 138 (2002)
3. R.L.Puurunen, W.Vandervorst, submitted for publication
4. G.Beyer, A.Satta, J.Schuhmacher, K.Maex, W.Besling, O.Kilpela, H.Sprey, G.Tempel, Microelectronic Engr. (64) p233-245, 2002
5. T.Abell, K.Maex, Microelectronic Engr., in press.
6. W.M.Li, K.Elers, J.Kostamo, S.Kaipo, H.Huotari, M.Soininen, P.J.Soininen, M.Tuominen, S.Hauka, S.Smith, W.Besling, Proceedings of IITC 2002, (IEEE NY), 2002.