The p-channel a-Si:H thin film transistor with plasma etched copper electrodes

Materials Research Society Symposium Proceedings

Volumn 808, Issue , 2004, Pages 667-672

  Nominanda, Helinda ^a   Liu, Guojun ^a   Lee, Hyun Ho ^a   Kuo, Yue ^a  

^a Department of Electrical and Computer Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL MECHANICAL POLISHING; CMOS INTEGRATED CIRCUITS; ELECTRODES; FIELD EFFECT TRANSISTORS; OHMIC CONTACTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; THRESHOLD VOLTAGE;

CHANNEL DOPING EFFICIENCY; DIFFUSION BARRIERS; FIELD EFFECT MOBILITY; IMPURITY SCATTERING;

THIN FILM TRANSISTORS;

EID: 12744277373     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-808-a4.12     Document Type: Conference Paper

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