(A)thermal migration of Ge during junction formation in s-Si layers grown on thin SiGe-buffer layers

Materials Research Society Symposium Proceedings

Volumn 809, Issue , 2004, Pages 273-279

  Vandervorst, W ^a,c   Pawlak, B J ^b   Janssens, T ^a   Brijs, B ^a   Delhougne, R ^a   Caymax, M ^a   Loo, R ^a  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DIFFUSION; EPITAXIAL GROWTH; GERMANIUM; ION BEAMS; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THICKNESS MEASUREMENT;

COLLISION CASCADE; SILICON LAYERS; SOLID PHASE EPITAXIAL REGROWTH (SPER); THERMAL BUDGET;

SILICON ALLOYS;

EID: 12744258043     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-809-b9.5.1/c9.5     Document Type: Conference Paper

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