Instrumentation system to improve ISFET behaviour

Conference Record - IEEE Instrumentation and Measurement Technology Conference

Volumn 2, Issue , 2002, Pages 1291-1294

  Casans, S ^a   Navarro, A E ^a   Ramirez D ^a   Espi J M ^a   Abramova, N ^b   Baldi, A ^b  

^a UNIVERSITY OF VALENCIA   (Spain)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

Hysteresis; ISFET; Temporary drifts; Thermic dependence

Indexed keywords

HYSTERESIS; ION SENSITIVE FIELD EFFECT TRANSISTORS; SOLID STATE DEVICES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

TEMPORARY DRIFTS; THERMIC DEPENDENCE; VIRTUAL INSTRUMENTATION;

CHEMICAL SENSORS;

EID: 0036045334     PISSN: None     EISSN: None     Source Type: Journal    
DOI: 10.1109/IMTC.2002.1007143     Document Type: Article

References (6)

1. Circuit provides constant current for ISFETs/MEMFETs
2. Novel constant current driver for ISFET/MEMFETs characterization
3. The hysteresis and drift effect of hydrogenated amorphous silicon for ISFET