The study on mechanism of ultraviolet laser emission at room temperature from nanocrystal thin ZnO films grown on sapphire substrate by L-MBE

Microelectronics Journal

Volumn 35, Issue 4, 2004, Pages 389-392

  He, Yong Ning ^a   Zhu, Chang Chun ^a   Zhang, Jing Wen ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

Excitonic radiative recombination; Laser molecular beam epitaxy; The quantum size confinement effect; ZnO nanocrystal thin film

Indexed keywords

ATOMIC FORCE MICROSCOPY; ENERGY GAP; FILM GROWTH; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; THERMODYNAMIC STABILITY; X RAY DIFFRACTION; ZINC OXIDE;

EXCITONIC RADIATIVE RECOMBINATION; LASER MOLECULAR BEAM EPITAXY (L-MBE); THE QUANTUM SIZE CONFINEMENT EFFECTS; ZNO NANOCRYSTAL THIN FILMS;

THIN FILMS;

EID: 1442284504     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00252-0     Document Type: Conference Paper

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