Simulation of Na, K, Cs and Cs(O) adsorption on GaAs(1 1 0) and (1 0 0) surfaces: Towards predictable electronic structure of activation layer

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 536, Issue 3, 2005, Pages 295-301

  Kulkova, S E ^a   Khanin, D V ^a   Subashiev, A V ^b  

^a INSTITUTE OF STRENGTH PHYSICS AND MATERIALS SCIENCE   (Russian Federation)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

Electronic structure; III V semiconductors; Thin films; Work function

Indexed keywords

ADSORPTION; ALKALI METALS; COMPUTER SIMULATION; DEPOSITION; ELECTRONIC STRUCTURE; SUBSTRATES; THIN FILMS; VACUUM;

MULTIPOLE EXPANSION; SEMICONDUCTOR SURFACES; SURFACE RECONSTRUCTION; WORK FUNCTION;

SEMICONDUCTING GALLIUM;

EID: 12444252074     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2004.08.087     Document Type: Conference Paper

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