Analysis of the Temperature Characteristics in Polycrystalline Si Solar Cells Using Modified Equivalent Circuit Model

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 12, 2003, Pages 7175-7179

  Nishioka, Kensuke ^a   Sakitani, Nobuhiro ^a   Kurobe, Ken Ichi ^b   Yamamoto, Yukie ^a   Ishikawa, Yasuaki ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

2 diode model; Equivalent circuit; Polycrystalline; Si; Solar cell; Temperature

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; EQUIVALENT CIRCUITS; GRAIN BOUNDARIES; INDUCED CURRENTS; LASER BEAM EFFECTS; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS; THERMAL EFFECTS;

2-DIODE MODEL; MINORITY CARRIERS; POLYCRYSTALLINE;

SOLAR CELLS;

EID: 1242332881     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.7175     Document Type: Review

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