An Interface-Free-Energy Approach to Semiconductor Electrode Chemistry: Examples of Si and Ge

Journal of the Electrochemical Society

Volumn 151, Issue 2, 2004, Pages

  Chazalviel, J N ^a   Maroun, F ^a   Ozanam, F ^a  

^a LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT ANGLE; FREE ENERGY; GRAVIMETRIC ANALYSIS; HYDRATION; INTERFACES (MATERIALS); MONOLAYERS; OXIDATION; SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES; WETTING;

ELECTRODE CHEMISTRY; HYDROXYL MONOLAYERS;

ELECTRODES;

EID: 1242332471     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1638385     Document Type: Article

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