Influence of gamma radiation on the electrical properties of MnO and MnO/TeO2 thin films

Annalen der Physik (Leipzig)

Volumn 13, Issue 1-2, 2004, Pages 87-89

  Arshak, Khalil ^a   Korostynska, Olga ^a  

^a UNIVERSITY OF LIMERICK   (Ireland)

Author keywords

Gamma radiation; Manganese oxide; Tellurium dioxide; Thin films

Indexed keywords

COMPOSITION; DEPOSITION; DOSIMETRY; GAMMA RAYS; IONIZATION; MANGANESE COMPOUNDS; MELTING; RADIATION DAMAGE; TELLURIUM COMPOUNDS;

DENSITY CHANGES; THERMAL COATINGS;

THIN FILMS;

EID: 1242329353     PISSN: 00033804     EISSN: None     Source Type: Journal    
DOI: 10.1002/andp.200310059     Document Type: Conference Paper

References (4)

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2. K. Arshak, O. Korostynska, and J. Harris, Proc. IEEE 23rd MIEL 1, 357-360 (2002).
3. K. Arshak and O. Korostynska, Sens. Rev. SR 23:1, 48-54 (2003).
4. E. Atanassova et al, Microelectron. J. 32, 553-562 (2001).