Electrical isolation of AlxGa1-xAs by proton irradiation

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn 2000-January, Issue , 2000, Pages 447-450

  Lippen, T V ^a,b   Boudinov, H ^a,c   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; GALLIUM; IRRADIATION; MICROELECTRONICS; THERMODYNAMIC STABILITY;

CARRIER TRAPS; CONDUCTIVE LAYER; ELECTRICAL ISOLATION; FREE CARRIER CONCENTRATION; P-TYPE CONDUCTIVE; TEMPERATURE RANGE; THRESHOLD DOSE; UPPER LIMITS;

PROTON IRRADIATION;

EID: 1242309533     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2000.1022986     Document Type: Conference Paper

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