Preparation and field electron emission of microcrystalline diamond deposited on a porous silicon substrate

Materials Science and Engineering: B

Volumn 107, Issue 2, 2004, Pages 233-236

  Chen, G H ^a   Cai, R Q ^b   Song, X M ^a   Deng, J X ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b Lanzhou univ   (China)

Author keywords

Diamond films; Field electron emission; MW CVD; Porous silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; CURRENT DENSITY; ELECTRIC FIELDS; ELECTRON EMISSION; ELECTRONIC STRUCTURE; ETCHING; HEAT RESISTANCE; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS;

ELECTRON AFFINITY; FIELD ELECTRON EMISSION; MW-CVD;

DIAMOND FILMS;

EID: 1242287479     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.11.020     Document Type: Article

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