The modification of the properties of n-type conductivity porous silicon by argon ion irradiation

Vacuum

Volumn 73, Issue 1, 2004, Pages 105-108

  Kostishko, B M ^a   Nagornov, Yu S ^a   Appolonov, S V ^a  

^a ULYANOVSK STATE UNIVERSITY   (Russian Federation)

Author keywords

Auger spectroscopy; Ion irradiation; Photoluminescence; Porous silicon

Indexed keywords

ANODIC OXIDATION; CHEMICAL MODIFICATION; COMPOSITION; DATA REDUCTION; DIFFUSION; ELECTRIC CONDUCTIVITY; FATIGUE OF MATERIALS; INFRARED RADIATION; OXYGEN; PHOTOLUMINESCENCE; SPECTROSCOPIC ANALYSIS;

ELECTROCHEMICAL ANODIZATION; ELECTROPHYSICS; SCANNING PROBE MICROSCOPY;

POROUS SILICON;

EID: 1242265485     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2003.12.030     Document Type: Conference Paper

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