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Volumn 50, Issue 6 I, 2003, Pages 1991-1997

In-Flight Annealing of Displacement Damage in GaAs LEDs: A Galileo Story

Author keywords

Annealing; Electron radiation effects; Extrater restrial radiation effects; Light emitting diodes; Nonionizing energy loss (NIEL); Proton radiation effects

Indexed keywords

ANNEALING; DEGRADATION; IRRADIATION; PHASE LOCKED LOOPS; PHOTOTRANSISTORS; PROTONS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; TELEMETERING;

EID: 1242265269     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.821374     Document Type: Conference Paper
Times cited : (13)

References (12)
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  • 4
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    • Proton damage in linear and digital optocouplers
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    • Johnston, A.H.1    Rax, B.G.2
  • 6
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    • Damage correlation in semiconductors exposed to gamma, electron and proton irradiation
    • Dec.
    • G. P. Summers, E. A. Burke, P. Shapiro, S. R. Mesenger, and R. J. Walters, "Damage correlation in semiconductors exposed to gamma, electron and proton irradiation," IEEE Trans. Nucl. Sci., vol. 40, pp. 1372-1379, Dec. 1993.
    • (1993) IEEE Trans. Nucl. Sci. , vol.40 , pp. 1372-1379
    • Summers, G.P.1    Burke, E.A.2    Shapiro, P.3    Mesenger, S.R.4    Walters, R.J.5
  • 8
    • 0038382314 scopus 로고    scopus 로고
    • Review of displacement damage effects in silicon devices
    • June
    • J. R. Srour, C. J. Marshall, and P. W. Marshall, "Review of displacement damage effects in silicon devices," IEEE Trans. Nucl. Sci., vol. 50, pp. 653-670, June 2003.
    • (2003) IEEE Trans. Nucl. Sci. , vol.50 , pp. 653-670
    • Srour, J.R.1    Marshall, C.J.2    Marshall, P.W.3
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    • Characterization of proton damage in light-emitting diodes
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    • A. H. Johnston and T. F. Miyahira, "Characterization of proton damage in light-emitting diodes," IEEE Trans. Nucl. Sci., vol. 47, pp. 2500-2507, Dec. 2000.
    • (2000) IEEE Trans. Nucl. Sci. , vol.47 , pp. 2500-2507
    • Johnston, A.H.1    Miyahira, T.F.2
  • 11
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    • Energy dependence of proton damage in optical emitters
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    • _ "Energy dependence of proton damage in optical emitters," IEEE Trans. Nucl. Sci., vol. 49, pp. 1426-1431, June 2002.
    • (2002) IEEE Trans. Nucl. Sci. , vol.49 , pp. 1426-1431
  • 12
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    • Proton damage effects in light-emitting diodes
    • B. H. Rose and C. E. Barnes, "Proton damage effects in light-emitting diodes," J. Appl. Phys., vol. 53, no. 3, p. 1772, 1982.
    • (1982) J. Appl. Phys. , vol.53 , Issue.3 , pp. 1772
    • Rose, B.H.1    Barnes, C.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.