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note
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The two compounds were prepared under solvothermal condition in a 25 mL Teflon-lined steel autoclave under autogenous pressure. For 1, a mixture of elemental manganese (55 mg, 1 mmol), arsenic (75 mg, 1 mmol), and sulphur (96 mg, 3 mmol) was heated with dien (1.5 mL, 13.5 mmol) and water (1.5 mL) at 140°C for 6 days. For 2, the same amounts of Mn, As, and S were applied, but 3 mL of en was used (170°C for 5 days). The yellow crystals for both compounds were filtered, washed with dry diethyl ether, and stored under nitrogen atmosphere. Yield, 83% for 1 and 76% or 2 based on arsenic.
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24
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12344295490
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note
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int = 0.0520). R values for reflections with I > 2σ(I): R1 = 0.0663 and wR2 = 0.1614, GOF = 1.013.
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12344280039
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note
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int = 0.0559), R values for reflections with I > 2σ(I). R1 = 0.0663 and wR2 = 0.1550, GOF = 1.006.
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