Effect of hydrostatic pressure on the transport properties in magnetic semiconductors

Physica Status Solidi C: Conferences

Volumn 1, Issue 12, 2004, Pages 3571-3574

  Csontos, M ^a   Mihaly G ^a   Janko, B ^b   Wojtowicz, T ^b,c   Lim, W L ^b   Liu, X ^b   Furdyna, J K ^b  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^b UNIVERSITY OF NOTRE DAME   (United States)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; HALL EFFECT; HYDROSTATIC PRESSURE; INDIUM COMPOUNDS; MAGNETIC COUPLINGS; MAGNETIC MOMENTS; MAGNETIZATION; PHASE TRANSITIONS; REFLECTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SQUIDS; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

FERROMAGNETIC STATE; HALL MEASUREMENTS; LOCALIZED MOMENTS; PRESSURE-INDUCED ENHANCEMENT;

FERROMAGNETIC MATERIALS;

EID: 12344289563     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200405508     Document Type: Conference Paper

References (7)

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6. M. Csontos et al., to be published
7. T. Dietl et al., Semicond. Sci. Technol. 17, 377 (2002).