Multiple As delta layered Si thin films for SIMS quantification and depth scale calibration

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 302-305

  Cho, S B ^a   Shon, H K ^a   Kang, H J ^a   Hong, T E ^b   Kim, H K ^c   Lee, H I ^c   Kim, K J ^c   Moon, D W ^c  

^a Chungbuk National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

As doping; Delta layer; MEIS; RSF; SIMS

Indexed keywords

DOPING (ADDITIVES); ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SILICON;

DELTA LAYER;

THIN FILMS;

EID: 12244287587     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00664-5     Document Type: Conference Paper

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3. van der Veen J.F. Surf. Sci. Rep. 5:1985;199.
4. Kim Y.P., Choi S.K., Kim H.K., Moon D.W. Appl. Phys. Lett. 71:1997;3504.
5. Kido Y., Koshikawa T. J. Appl. Phys. 67:1990;187.