D-SIMS and ToF-SIMS quantitative depth profiles comparison on ultra thin oxynitrides

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 281-284

  Bersani, M ^a   Giubertoni, D ^a   Barozzi, M ^a   Eiacob, E ^a   Vanzetti, L ^a   Anderle, M ^a   Lazzeri, P ^a   Crivelli, B ^b   Zanderigo, F ^b  

^a ITC IRST   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Depth profile; Low energy; Oxynitrides; Quantification

Indexed keywords

DIELECTRIC MATERIALS; OXIDES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

ULTRA THIN OXIDES;

ULSI CIRCUITS;

EID: 12244273277     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00654-2     Document Type: Conference Paper

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