Experimental and Theoretical Joint Study on the Electronic and Structural Properties of Silicon Nanocrystals Embedded in SiO2: Active Role of the Interface Region

Materials Research Society Symposium - Proceedings

Volumn 770, Issue , 2003, Pages 87-92

  Daldosso, N ^a   Luppi, M ^b   Dalba, G ^a   Pavesi, L ^a   Rocca, F ^c   Priolo, F ^d   Franzo G ^d   Iacona, F ^c   Degoli, E ^b   Magri, R ^b   Ossicini, S ^b  

^a UNIVERSITY OF TRENTO   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c CNR   (Italy)

^d UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; ELECTRON EMISSION; ELECTRONIC STRUCTURE; GAIN MEASUREMENT; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SPECTRUM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

OPTICAL GAIN; TOTAL ELECTRON YIELD (TEY); X-RAY ABSORPTION SPECTROSCOPY (XAS);

NANOSTRUCTURED MATERIALS;

EID: 12144291404     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-770-i6     Document Type: Conference Paper

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