[(AlN)1/(GaN)n1]m/(AlN) n2-based quantum wells for quantum-cascade-laser application

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 765-769

  Ishida, A ^a   Inoue, Y ^a   Nagasawa, H ^a   Sone, N ^a   Ishino, K ^a   Kim, J J ^b   Makino, H ^b   Yao, T ^b   Kan, H ^c   Fujiyasu, H ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c HPK   (Japan)

Author keywords

AlN; Cascade; Mid infrared; Nitride; Quantum well; TEM; X ray diffraction

Indexed keywords

ALUMINUM NITRIDE; COMPOSITION; GALLIUM NITRIDE; INFRARED RADIATION; LIGHT POLARIZATION; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ALN; MID-INFRARED REGIONS; QUANTUM CASCADE LASER APPLICATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 12144290660     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.131     Document Type: Conference Paper

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