CDF run IIb silicon: The new innermost layer

IEEE Nuclear Science Symposium Conference Record

Volumn 2, Issue , 2003, Pages 1128-1132

  Merkel, Petra ^a  

^a FERMI NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DATA REDUCTION; MICROPROCESSOR CHIPS; RADIATION; SCATTERING; SENSORS;

BEAMPIPE; LUMINOSITY; RADIATION HARDNESS; READOUT CHIPS;

SILICON;

EID: 11944267753     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/nssmic.2003.1351890     Document Type: Conference Paper

References (5)

1. CDF Collaboration, 'The Run IIb Technical Design Report', CDFNOTE 6261.
2. KEYCOM Co., 3-40-2 Minamiotsuka, Toshima-ku Tokyo, 170-0005 Japan; www.keycom.co.jp; info@keycom.co.jp.
3. DYCONEX Ltd., Grindelstrasse 40, CH-8303 Bassersdorf, Switzerland; www.dyconex.com; mail@dyconex.com.
4. R.-S. Lu for the CDF Collaboration, 'CDF Run IIb Silicon: Stave design and testing', IEEE-NSS-2003 conference proceedings.
5. C. Hill for the CDF Collaboration, 'Initial Experience with the CDF Layer 00 Silicon Detector', Vertex 2002 proceedings, published in Nucl. Instrum. Meth. A511:118-120, 2003.