Anomalous gate length dependence of threshold voltage of trench-isolated metal oxide semiconductor field effect transistors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 7 SUPPL. B, 1998, Pages

  Oishi, Toshiyuki ^a   Shiozawa, Katsuomi ^a   Furukawa, Akihiko ^a   Abe, Yuji ^a   Tokuda, Yasunori ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Metal oxide semiconductor field effect transistor; Short channel; Trench isolation; ULSI

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC INSULATION; GATES (TRANSISTOR); THRESHOLD VOLTAGE; ULSI CIRCUITS;

TRENCH INSULATION;

MOSFET DEVICES;

EID: 11744373007     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l852     Document Type: Article

References (7)

1. Y. Nishioka et al.: Tech. Dig. 1995 Int. Electron Devices Meet., Dec. 1995, Washington D.C., p. 903.
2. A. H. Perera, J.-H. Lin, Y.-C. Ku, M. Azrak, B. Taylor, J. Hayden, M. Thompson and M. Blackwell: Tech. Dig. 1995 Int. Electron Devices Meet., Dec. 1995, Washington D.C., p. 679.
3. A. Chatterjee, J. Esquivel, S. Nag, I. Ali, D. Rogers, K. Taylor, K. Joyner, M. Mason, D. Mercer, A. Amerasekera, T. Houston and I. C. Chen: Tech. Dig. 1996 Sym. VLSI Technology, June 1996, Honolulu, p. 156.
4. P. Sallagoity, G. Vincent and A. Poncet: Proc. 1996 26th European Solid Stale Device Research Conf., Sept. 1996, Bologna (Editions Frontieres, France, 1996) p. 249.
5. T. Oishi, K. Shiozawa, A. Furukawa, Y. Abe and Y. Tokuda: Jpn. J. Appl. Phys. 36 (1997) L597.
6. K. Shiozawa, T. Oishi, H. Maeda, T. Murakamu, K. Yasumura, Y. Abe and Y. Tokuda: Jpn. J. Appl. Phys. 35 (1996) L1625.
7. B. Agrawal, V. K. De and J. D. Meindl: IEEE Trans. Electron Devices 42 (1995) 2170.