Electrical characteristics of ultra-fine trench isolation fabricated by a new two-step filling process

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 12 B, 1996, Pages

  Shiozawa, Katsuomi ^a   Oishi, Toshiyuki ^a   Maeda, Hiroshi ^a   Murakami, Taka aki ^a   Yasumura, Kenji ^a   Abe, Yuji ^a   Tokuda, Yasunori ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DRY ETCHING; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; ELECTRON BEAM LITHOGRAPHY; MOSFET DEVICES; OXIDES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SILICA; ULSI CIRCUITS;

NARROW CHANNEL TRANSISTOR; TETRAETHYL ORTHO SILICATE; TRENCH ISOLATION;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0030386305     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1625     Document Type: Article

References (7)