Formation of GaN nano-column structure by nitridation

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1129-1132

  Hashimoto, A ^a   Motiduki, T ^a   Wada, H ^a   Yamamoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

GaN Nano Column Structure; Nitridation

Indexed keywords

ANODIC OXIDATION; ELECTROCHEMISTRY; NANOSTRUCTURED MATERIALS; NITRIDING; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY; X RAY ANALYSIS;

ELECTROCHEMICAL ANODIZATION; SEMICONDUCTING GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 11644310525     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1129     Document Type: Article

References (9)

1. I. Akasaki, H. Amano, S. Sato, H. Sakai, T. Tanaka and M. Koike, Jpn. J. Appl. Phys. 34, L1517 (1995).
2. S. Nakamura, M. Senoh, S. Nagahata, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys. 35, L74 (1996).
3. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 490 (1982).
4. S. Strite and M. Morkoq, J. Vac. Sci. Technol. B10, 1242 (1992).
5. S. Kitamura, K. Hiramatsu and N. Sawaki, Jpn. J. Appl. Phys. 34, L1184 (1995).
6. S. Tanaka, S. Iwai and Y. Aoyagi, Appl. Phys. Lett. 69, 4096 (1996).
7. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
8. N. Koshida and H. Koyama, Jpn. J. Appl. Phys. 30, L1221 (1990).
9. A. Yamamoto, Y. Yamauchi, T. Ogawa, M. Ohkubo and A. Hashimoto, Int. Phys. Conf. Ser. 142, 879 (1996).