SCOPUS 정보 검색 플랫폼

Volumn 264-268, Issue PART 2, 1998, Pages 1221-1224

MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures

(8) Yoshikawa, A a Qin, Z a Nagano, H a Sugure, Y a Jia, A a Kobayashi, M a Kato, Y a Takahashi, K b

a CHIBA UNIVERSITY (Japan)

b TEIKYO UNIVERSITY OF SCIENCE (Japan)

Author keywords

AFM; Atomic Hydrogen; Cubic GaN; GaAs Substrate; High Resolution XRD; MBE; Reciprocal Space Mapping; RHEED

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; HYDROGEN; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE CLEANING; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; RECIPROCAL SPACE MAPPING;

NITRIDES;

EID: 11644299599 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.264-268.1221 Document Type: Article

Times cited : (3)

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