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Journal of Applied Physics

Volumn 83, Issue 12, 1998, Pages 7900-7902

Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy

(6) Li, Xiaobing a Sun, Dianzhao a Dong, Jianrong a Li, Jianping a Kong, Meiying a Yoon, S F b

a INSTITUTE OF SEMICONDUCTORS (China)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11644268061 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.367968 Document Type: Article

Times cited : (2)

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