SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 1160-1164

Band-gap level of the cadmium vacancy in CdTe

(3) Reislohner U a Grillenberger, J a Witthuhn, W a

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

Author keywords

Admittance; CdTe; Doping; Vacancy

Indexed keywords

EID: 11544300560 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/s0022-0248(98)80243-1 Document Type: Article

Times cited : (22)

References (16)

1
- 0000473016
- P. Emanuelsson, P. Omling, B.K. Meyer, M. Wienecke, M. Schenk, Phys. Rev. B 47 (1993) 15578.
- (1993) Phys. Rev. B , vol.47 , pp. 15578
- Emanuelsson, P.¹ Omling, P.² Meyer, B.K.³ Wienecke, M.⁴ Schenk, M.⁵

2
- 0030562146
- U. Reislöhner, N. Achtziger, M. Rüb, W. Witthuhn, J. Crystal Growth 159 (1996) 372.
- (1996) J. Crystal Growth , vol.159 , pp. 372
- Reislöhner, U.¹ Achtziger, N.² Rüb, M.³ Witthuhn, W.⁴

3
- 0030121517
- S.G. Jahn, Isolde Collaboration, H. Hofsäss, M. Restle, C. Ronning, H. Quintel, K. Bharuth-Ram, U. Wahl, J. Crystal Growth 161 (1996) 172.
- (1996) J. Crystal Growth , vol.161 , pp. 172
- Jahn, S.G.¹ Collaboration, I.² Hofsäss, H.³ Restle, M.⁴ Ronning, C.⁵ Quintel, H.⁶ Bharuth-Ram, K.⁷ Wahl, U.⁸

4
- 0019080393
- J.L. Pautrat, B. Katircioglu, N. Magnea, D. Bensahel, J.C. Pfister, L. Revoil, Solid State Electron. 23 (1980) 1159.
- (1980) Solid State Electron. , vol.23 , pp. 1159
- Pautrat, J.L.¹ Katircioglu, B.² Magnea, N.³ Bensahel, D.⁴ Pfister, J.C.⁵ Revoil, L.⁶

5
- 0020163183
- R. Kalish, M. Deicher, G. Schatz, J. Appl. Phys. 53 (1992) 4793.
- (1992) J. Appl. Phys. , vol.53 , pp. 4793
- Kalish, R.¹ Deicher, M.² Schatz, G.³

6
- 0027578311
- T. Wichert, T. Krings, H. Wolf, Physica B 185 (1993) 297.
- (1993) Physica B , vol.185 , pp. 297
- Wichert, T.¹ Krings, T.² Wolf, H.³

7
- 0040889346
- W. Witthuhn, Nucl. Instrum. Methods B 63 (1992) 209.
- (1992) Nucl. Instrum. Methods B , vol.63 , pp. 209
- Witthuhn, W.¹

8
- 0003793356
- G. Langouche (Ed.), ch. 2, Elsevier, Amsterdam
- T. Wiehert, N. Achtziger, H. Metzner, R. Sielemann, in: G. Langouche (Ed.), Hyperfine Interaction of Defects in Semiconductors, ch. 2, Elsevier, Amsterdam, 1992.
- (1992) Hyperfine Interaction of Defects in Semiconductors
- Wiehert, T.¹ Achtziger, N.² Metzner, H.³ Sielemann, R.⁴

9
- 0004052502
- Academic Press, London
- P. Blood, J.W. Orton, The Electrical Characterization of Semiconductors: Majority Carriers and Electron States, Academic Press, London, 1992, p. 509.
- (1992) The Electrical Characterization of Semiconductors: Majority Carriers and Electron States , pp. 509
- Blood, P.¹ Orton, J.W.²

10
- 0020090297
- E. Molva, J.P. Chamonal, J.L. Pautrat, Phys. Stat. Sol. (b) 109 (1982) 635.
- (1982) Phys. Stat. Sol. (b) , vol.109 , pp. 635
- Molva, E.¹ Chamonal, J.P.² Pautrat, J.L.³

11
- 0343141059
- J.P. Chamonal, E. Molva, M. Dupuy, R. Accomo, J.L. Pautrat, Physica B 116 (1983) 519.
- (1983) Physica B , vol.116 , pp. 519
- Chamonal, J.P.¹ Molva, E.² Dupuy, M.³ Accomo, R.⁴ Pautrat, J.L.⁵

12
- 0027239402
- P. Rudolph, M. Mühlberg, Mater. Sci. Eng. B 16 (1993) 8.
- (1993) Mater. Sci. Eng. B , vol.16 , pp. 8
- Rudolph, P.¹ Mühlberg, M.²

13
- 0000157330
- J. Tregilgas, B. Gnade, J. Vac. Sci. Technol. A 3 (1985) 156.
- (1985) J. Vac. Sci. Technol. A , vol.3 , pp. 156
- Tregilgas, J.¹ Gnade, B.²

14
- 0030125312
- B.K. Meyer, W. Stadler, J. Crystal Growth 161 (1996) 119.
- (1996) J. Crystal Growth , vol.161 , pp. 119
- Meyer, B.K.¹ Stadler, W.²

15
- 0027257046
- H. Zimmermann, R. Boyn, P. Rudolph, J. Bollmann, A. Klimakov, R. Krause, Mater. Sci. Eng. B 16 (1993) 139.
- (1993) Mater. Sci. Eng. B , vol.16 , pp. 139
- Zimmermann, H.¹ Boyn, R.² Rudolph, P.³ Bollmann, J.⁴ Klimakov, A.⁵ Krause, R.⁶

16
- 84990739179
- R. Krause-Rehberg, H. Zimmermann, A. Klimakow, Th. Drost, Phys. Stat. Sol. (a) 134 (1992) K45.
- (1992) Phys. Stat. Sol. (a) , vol.134
- Krause-Rehberg, R.¹ Zimmermann, H.² Klimakow, A.³ Drost, Th.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.