Electrical transport and trap properties in nitrogen-doped p-type MBE-grown ZnSe layers on GaAs using different contact materials

Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 440-444

  Prosch G ^a   Beyer, R ^a   Behringer, M ^b   Fehrer, M ^b   Burghardt, H ^a   Thomas, E ^a   Hommel, D ^b   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11544291646     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)80092-4     Document Type: Article

References (6)

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4. G. Prösch, K. Hellig, M. Behringer, M. Fehrer, R. Beyer, D. Hommel, D.R.T. Zahn, Phys. Stat. Sol. B 202 (1997) 895.
5. T. Marshall, S. Colak, D. Cammack, J. Appl. Phys. 34 (1995) L827.
6. J.J. Fijol, L.C. Calhoun, R.M. Park, P.H. Holloway, J. Electron. Mater. 24 (1995) 143.