Hole traps in nitrogen-doped ZnSe epitaxial layers

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 280-283

  Matsumoto, Takashi ^a   Egashira, Katsumi ^a   Kato, Takamasa ^a  

^a UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

EPITAXIAL LAYERS; HOLE EMISSION; HOLE TRAPS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030562201     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00762-8     Document Type: Article

References (5)

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3. W.B. Leigh and B.W. Wessels, J. Appl. Phys. 55 (1984) 1614.
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5. B. Hu, G. Karczewski, H. Luo, N. Samarth and J.K. Furdyna, Appl. Phys. Lett. 63 (1993) 358.