First-principles study on field evaporation for silicon atom on Si(001) surface

Journal of Applied Physics

Volumn 95, Issue 3, 2004, Pages 1568-1571

  Ono, Tomoya ^a   Hirose, Kikuji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRIC FIELDS; EVAPORATION; FINITE DIFFERENCE METHOD; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; SILICON;

MOLECULAR DYNAMICS SIMULATIONS; SILICON ATOMS;

ATOMIC PHYSICS;

EID: 1142304475     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1636258     Document Type: Article

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