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Volumn 357-358, Issue , 1996, Pages 830-834

Diffusion of a Si adatom on the Si(100) surface in an electric field

Author keywords

Density functional calculations; Field effect; Molecular dynamics; Silicon; Surface diffusion; Surface electronic phenomena

Indexed keywords

ANISOTROPY; ATOMS; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; INTERFACIAL ENERGY; MOLECULAR DYNAMICS; POLARIZATION; SEMICONDUCTING SILICON; SURFACE PHENOMENA; SURFACES;

EID: 0030173157     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00272-5     Document Type: Article
Times cited : (15)

References (14)
  • 13
    • 0042319391 scopus 로고
    • Eds. G.E. Murch and A.S. Nowick Academic, New York
    • G. Jacucci, in: Diffusion in Crystalline Solids, Eds. G.E. Murch and A.S. Nowick (Academic, New York, 1984) p. 429.
    • (1984) Diffusion in Crystalline Solids , pp. 429
    • Jacucci, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.