Infrared spectroscopic ellipsometry applied to the characterization of nano-structures of silicon IC manufacturing

Thin Solid Films

Volumn 450, Issue 1, 2004, Pages 173-177

  Boher, P ^a   Bucchia, M ^a   Guillotin, C ^a   Defranoux, C ^a  

^a SOPRA   (France)

Author keywords

Dielectric layers; Ellipsometry; Silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; DIELECTRIC MATERIALS; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED DEVICES; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; NONDESTRUCTIVE EXAMINATION; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY;

SPECTROSCOPIC ELLIPSOMETRY (SE);

SEMICONDUCTING SILICON;

EID: 1142303857     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.066     Document Type: Conference Paper

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