Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance

Thin Solid Films

Volumn 450, Issue 1, 2004, Pages 163-166

  Shokhovets, S ^a   Fuhrmann, D ^a   Goldhahn, R ^a   Gobsch, G ^a   Ambacher, O ^a   Hermann, M ^b   Eickhoff, M ^b  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Electroreflectance; Excitons; Gallium nitride; Schottky diode

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; DIELECTRIC MATERIALS; EXCITONS; EXTRAPOLATION; GALLIUM NITRIDE; IONIZATION; NITRIDES; PHOTONS; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY;

ELECTROREFLECTANCE (ER); PHOTON ENERGY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 1142303845     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.064     Document Type: Conference Paper

References (5)

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