Reactive ion etching of Si 1-x Ge x alloy with hydrogen bromide

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 222-226

  Wang, C S ^a   Shu, D Y ^a   Hsieh, W Y ^a   Tsai, M J ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

HBr; Loading effect; Plasma etching; RIE; SiGe; Trench

Indexed keywords

BROMINE COMPOUNDS; CHEMICAL VAPOR DEPOSITION; HYDROGEN; OXIDATION; OXIDES; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SINGLE CRYSTALS; ULTRAHIGH VACUUM;

HYDROGEN BROMIDE (HBR); LOADING EFFECTS; REACTIVE ION ETCHING (RIE); SIGE; TRENCH;

SILICON ALLOYS;

EID: 1142292396     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.069     Document Type: Conference Paper

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