Positron-annihilation-induced Auger electron spectroscopy studies of the (100) and (111) surfaces of silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 24, 2003, Pages

  Fazleev, N G ^a,b   Kim, J ^a   Fry, J L ^a   Weiss, A H ^a  

^a UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

^b KAZAN STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; TUNGSTEN;

ARTICLE; AUGER ELECTRON SPECTROSCOPY; CRYSTAL; ELECTRON DIFFRACTION; ENERGY; GAMMA RADIATION; MATHEMATICAL MODEL; POSITRON; POSITRON ANNIHILATION INDUCED AUGER ELECTRON SPECTROSCOPY; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 1042299880     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.245307     Document Type: Article

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