Enhanced dielectric properties of [Pb(Mg1/3Nb 2/3)O3]0.9-PbTiO30.1 thin films grown on BaPbO3 perovskite electrode

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 A, 2004, Pages 7600-7603

  Ho, Sut Kam ^a   Hau, Fei Fei ^b   Wong, Kin Hung ^b  

^a UNIVERSITY OF MACAU   (Macao)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

BPO; Dielectric constant; Leakage current; Pulse laser deposition; Thin film

Indexed keywords

BARIUM COMPOUNDS; CALCINATION; DIELECTRIC MATERIALS; ELECTRODES; EVAPORATION; FILM GROWTH; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; PEROVSKITE; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; SINTERING; THERMOCOUPLES; THIN FILMS;

BAPBO3 (BPO); CONTAMINATION-FREE INTERFACES; POLYCRYSTALLINE FILMS; ROOM TEMPERATURE;

LEAD COMPOUNDS;

EID: 11144246255     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7600     Document Type: Article

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