Analysis of loss and junction temperature in power semiconductors of the matrix converter using simple simulation methods

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 2, Issue , 2004, Pages 850-855

  Odaka, Akihiro ^a   Itoh, Jun Ichi ^a   Sato, Ikuya ^a   Ohguchi, Hideki ^a   Kodachi, Hirokazu ^a   Eguchi, Naoya ^a   Umida, Hidetoshi ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

Jjunction case tempereture difference; Matrix converter; Power semiconductor loss; RB IGBT; Reverse blocking IGBT

Indexed keywords

COMPUTER SIMULATION; DIODES; ELECTRIC CURRENTS; ELECTRIC INVERTERS; ELECTRIC POTENTIAL; ELECTRIC RECTIFIERS; INSULATED GATE BIPOLAR TRANSISTORS; OPTIMIZATION; SEMICONDUCTOR MATERIALS; SIMULATORS;

JUNCTION-CASE TEMEPRATURE DIFFERENCE; MATRIX CONVERTERS; POWER SEMICONDUCTOR LOSS; RB-IGBT; REVERSE BLOCKING IGBT;

POWER CONVERTERS;

EID: 10944237939     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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