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Volumn 151, Issue 12, 2004, Pages

Second-order normal force brought about by polishing with a polyurethane pad

Author keywords

[No Author keywords available]

Indexed keywords

LITHOGRAPHY; LOADS (FORCES); OXIDES; PARAMETER ESTIMATION; RHEOLOGY; SILICA; STRAIN;

EID: 10844279982     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1812738     Document Type: Article
Times cited : (4)

References (16)
  • 12
    • 0042302055 scopus 로고    scopus 로고
    • (characterization for STI). May 4, 1999. Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139
    • D. Ouma, B. Lee, and D. Boning, Dielectric CMP characterization mask documentation. Version 1.2 (characterization for STI). May 4, 1999. Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139.
    • Dielectric CMP Characterization Mask Documentation. Version 1.2
    • Ouma, D.1    Lee, B.2    Boning, D.3
  • 13
    • 10844295465 scopus 로고    scopus 로고
    • Paper presented at SEMICON/WEST, July San Francisco, CA
    • D. Boning, Paper presented at SEMI CMP Standards Meeting, SEMICON/WEST, July 1999, San Francisco, CA.
    • (1999) SEMI CMP Standards Meeting
    • Boning, D.1
  • 15
    • 10844275273 scopus 로고    scopus 로고
    • Eco Physics, P.O. Box 282, Durnten, Switzerland, CH-8635
    • Eco Physics, P.O. Box 282, Durnten, Switzerland, CH-8635.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.