Influence of the electrical parameters on the input impedance of a fractal structure realised on silicon

Chaos, Solitons and Fractals

Volumn 24, Issue 2, 2005, Pages 479-490

  Cisse Haba, T ^a   Ablart, G ^b   Camps, T ^c   Olivie, F ^c  

^a INP HB   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

^c LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRIC FIELD EFFECTS; FRACTALS; MATHEMATICAL MODELS; MICROELECTRONIC PROCESSING; MOS DEVICES; NATURAL FREQUENCIES; SILICON;

ELECTRICAL MODELS; FRACTAL DIMENSIONS; HILBERT PATTERNS;

ELECTRIC IMPEDANCE;

EID: 10844275423     PISSN: 09600779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.chaos.2003.12.095     Document Type: Article

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