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Volumn 574, Issue 1, 2005, Pages 89-94

Anisotropy of electron structure at InAs(1 1 1) surfaces by laser pump-and-probe photoemission spectroscopy

Author keywords

Angle resolved photoemission; Indium arsenide; Laser methods; Surface electronic phenomena (work function, surface potential, surface states, etc.)

Indexed keywords

ANISOTROPY; ELECTRON ENERGY LEVELS; ELECTRON GAS; FERMI LEVEL; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOEMISSION;

EID: 10844273387     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.10.018     Document Type: Article
Times cited : (5)

References (27)
  • 11
    • 0003425106 scopus 로고
    • Semiconductor surfaces and interfaces, 2nd ed.
    • Springer-Verlag, Berlin
    • W. Mönch, Semiconductor Surfaces and Interfaces, 2nd ed., Springer Series in Surface Science, vol. 26, Springer-Verlag, Berlin, 1995.
    • (1995) Springer Series in Surface Science , vol.26
    • Mönch, W.1
  • 22
    • 10844255527 scopus 로고    scopus 로고
    • M. Björkvist, L.Ö. Olsson, M. Goshtasbi-Rad and U.O. Karlsson, manuscript
    • M. Björkvist, L.Ö. Olsson, M. Goshtasbi-Rad and U.O. Karlsson, manuscript.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.