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Volumn 402-404, Issue , 1998, Pages 590-594
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Electron accumulation at the InAs(110) cleavage surface
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Author keywords
Angle resolved photoemission; Indium aresenide; Laser methods
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Indexed keywords
ELECTRONS;
LASER PULSES;
PHOTOELECTRON SPECTROSCOPY;
PHOTOEMISSION;
SOLID STATE LASERS;
SURFACE STRUCTURE;
ELECTRON ACCUMULATION;
SEMICONDUCTING INDIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 0031623344
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(98)00002-8 Document Type: Article |
Times cited : (21)
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References (20)
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