Temperature driven semiconductor-metal transition and structural changes in liquid As2Se3

Journal of Physics Condensed Matter

Volumn 16, Issue 49, 2004, Pages

  Hosokawa, Shinya ^a,b   Tamura, Kozaburo ^c  

^a HIROSHIMA INSTITUTE OF TECHNOLOGY   (Japan)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

^c KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; LIGHT ABSORPTION; MOLECULAR DYNAMICS; SEMICONDUCTOR MATERIALS; SUPERCONDUCTING TRANSITION TEMPERATURE; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES; X RAY DIFFRACTION ANALYSIS;

HOMOPOLAR BONDS; MOLECULAR DYNAMICS (MD) SIMULATION; STRUCTURAL CHANGES; X-RAY ABSORPTION FINE STRUCTURE (XAFS);

ARSENIC COMPOUNDS;

EID: 10844256736     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/49/R02     Document Type: Review

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