Anomalous X-ray scattering studies on glassy GexSe1-x across the stiffness threshold composition x = 0.20

Zeitschrift fur Physikalische Chemie

Volumn 216, Issue 10, 2002, Pages 1219-1238

  Hosokawa, S ^a   Wang, Y ^a   Berar J F ^a   Greif, J ^a   Pilgrim, W C ^a   Murase, K ^a  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

Amorphous Semiconductor; Intermediate Range Order; Partial Structure; Synchrotron Radiation

Indexed keywords

AMORPHOUS SEMICONDUCTORS; GLASS; SELENIUM; SELENIUM COMPOUNDS; SEMICONDUCTING GERMANIUM; SOLVENTS; STIFFNESS; SYNCHROTRON RADIATION; X RAY SCATTERING;

ANOMALOUS X-RAY SCATTERING; CONCENTRATION DEPENDENCE; CONTINUOUS RANDOM NETWORKS; DIFFERENTIAL STRUCTURE; INTERMEDIATE RANGE ORDER; PARTIAL STRUCTURES; RIGIDITY PERCOLATION THRESHOLDS; TOTAL STRUCTURES;

GERMANIUM COMPOUNDS;

GERMANIUM; GLASS; SELENIUM;

ABSORPTION SPECTROSCOPY; ARTICLE; CHEMICAL COMPOSITION; RADIATION SCATTERING; RANDOMIZATION;

EID: 0036403046     PISSN: 09429352     EISSN: None     Source Type: Journal    
DOI: 10.1524/zpch.2002.216.10.1219     Document Type: Article

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