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Volumn 14, Issue 2, 2002, Pages 83-89

An overview of CCD development at Lawrence Berkeley National Laboratory

Author keywords

Back illuminated; Charge Coupled Device (CCD); Fully depleted; High resistivity silicon

Indexed keywords


EID: 10844224060     PISSN: 09226435     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:EXPA.0000004341.11906.bf     Document Type: Article
Times cited : (18)

References (10)
  • 1
    • 0026105822 scopus 로고
    • Dynamic suppression of interface-state dark current in buried-channel CCDs
    • Burke, B. E. and Gajar, S.A.: 1991, 'Dynamic Suppression of Interface-state Dark Current in Buried-channel CCDs', IEEE Trans. Elec. Dev. 38(2), 285.
    • (1991) IEEE Trans. Elec. Dev. , vol.38 , Issue.2 , pp. 285
    • Burke, B.E.1    Gajar, S.A.2
  • 4
    • 21544475542 scopus 로고    scopus 로고
    • private communication
    • Arjun Dey, private communication.
    • Dey, A.1
  • 6
    • 1942535348 scopus 로고    scopus 로고
    • Development of Back-illuminated, Fully-depleted CCD Image Sensors for use in Astronomy and Astrophysics
    • Bruges, Belgium
    • Holland, S. E. et al.: 1997, 'Development of Back-illuminated, Fully-depleted CCD Image Sensors for use in Astronomy and Astrophysics', presented at the 1997 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors, Bruges, Belgium.
    • (1997) 1997 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors
    • Holland, S.E.1
  • 7
    • 21544461538 scopus 로고    scopus 로고
    • Fully-depleted, back-illuminated charge-coupled deviced fabricated on high-resistivity silicon
    • in press
    • Holland, S. E., Groom, D. E., Palaio, N. P., Stover, R. J. and Wei, M.: 'Fully-depleted, Back-illuminated Charge-coupled Deviced Fabricated on High-resistivity Silicon', IEEE Trans. Elec. Dev., in press.
    • IEEE Trans. Elec. Dev.
    • Holland, S.E.1    Groom, D.E.2    Palaio, N.P.3    Stover, R.J.4    Wei, M.5
  • 10
    • 21544470945 scopus 로고    scopus 로고
    • U.S. Patent: 2000, Patent No. 6,259,085, 10 July Fully Depleted Back Illuminated CCD
    • U.S. Patent: 2000, Patent No. 6,259,085, 10 July 2000, Fully Depleted Back Illuminated CCD.
    • (2000)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.