Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

Journal of Applied Physics

Volumn 95, Issue 4, 2004, Pages 1811-1815

  Kindl, Dobroslav ^a   Toušková, Jana ^b   Hulicius, Eduard ^a   Pangrác, Jiří ^a   Šimeček, Tomislav ^a   Jurka, Vlastimil ^a   Hubík, Pavel ^a   Mareš, Jiří J ^a   Krištofik, Jozef ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b CHARLES UNIVERSITY   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ENERGY GAP; FERMI LEVEL; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS; TUNNEL DIODES;

BAND TO BAND TUNNELING; CHARGE TRANSPORT; DARK CURRENT VOLTAGE CHARACTERISTIC; GALLIUM ANTIMONIDE; HOMOJUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 10744232736     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1640794     Document Type: Article

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