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Volumn 114-115, Issue SPEC. ISS., 2004, Pages 214-217

The effect of the rapid thermal annealing on the interdiffusion and the reaction at the interface of the binary system Cr/Si

Author keywords

Implantation; Interdiffusion; Rapid thermal annealing; Rutherford backscattering spectrometry (RBS); Sheet resistance; Silicide; X ray diffraction

Indexed keywords

DIFFUSION; INTERFACES (MATERIALS); RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SINGLE CRYSTALS; X RAY DIFFRACTION;

IMPLANTATION; INTERDIFFUSION; SHEET RESISTANCE; SILICIDE;

CHROMIUM;

EID: 10644263070 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2004.07.014 Document Type: Conference Paper

Times cited : (4)

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