Thin film silicon compound growth mechanisms: CrSi2/Si(001)

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 94-97

  Heck, Claire ^a   Kusaka, Masahiko ^a   Hirai, Masaaki ^a   Iwami, Motohiro ^a   Yokota, Yasuhiro ^b  

^a OKAYAMA UNIVERSITY   (Japan)

^b OKAYAMA UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Chromium; Hetero epitaxy; Silicides; Transmission high energy electron diffraction

Indexed keywords

ANNEALING; CHROMIUM COMPOUNDS; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; FILM PREPARATION; HIGH ENERGY ELECTRON DIFFRACTION; REACTION KINETICS; SEMICONDUCTING SILICON; SILICON COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CHROMIUM SILICIDE; HETEROEPITAXY; SOLID PHASE REACTION; TRANSMISSION ELECTRON DIFFRACTION;

FILM GROWTH;

EID: 0346260315     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08583-5     Document Type: Article

References (9)

1. L.J. Chen and K.N. Tu, Mater. Sci. Rep., 6 (1991) 53.
2. A. Zur, T.C. McGill and M.-A. Nicolet, J. Appl. Phys., 57 (1985) 600.
3. M.C. Bost and J.E. Mahan, J. Appl. Phys., 63 (1988) 839.
4. F.Y. Shiau, H.C. Cheng and L.J. Chen, J. Appl. Phys., 59 (1986) 2784.
5. R.W. Fathauer, P.J. Grunthaner, T.L. Lin, K.T. Chang, J.H. Mazur and D.N. Jamieson, J. Vac. Sci. Technol. B, 6 (1988) 708.
6. L. Haderbache, P. Wetzel, C. Pirri, J.C. Peruchetti, D. Belmont and G. Gewinner, Surf. Sci., 209 (1989) L139.
7. J.E. Mahan, K.M. Geib, G.Y. Robinson, G. Bai and M.-A. Nicolet, J. Vac. Sci. Technol. B, 9 (1991) 64.
8. R. Jenkins, JCPDS International Center for Diffraction Data 1988, International Center for Diffraction Data, USA, 1988.
9. C. Heck, M. Kusaka, M. Masaaki, M. Iwami and H. Nakamura, Jpn. J. Appl. Phys., 33 (1994) 6667.