Trap levels in layered semiconductor Ga2SeS

Solid State Communications

Volumn 132, Issue 12, 2004, Pages 857-861

  Aydinli, A ^a   Gasanly, N M ^b   Aytekin, S ^a  

^a BILKENT UNIVERSITY   (Turkey)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

A. Chalcogenides; A. Semiconductors; C. Defects; D. Electrical properties

Indexed keywords

ANISOTROPY; CRYSTAL GROWTH; DEGRADATION; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY; VAN DER WAALS FORCES;

DEFECT LEVELS; SEMICONDUCTOR CRYSTALS; THERMALLY STIMULATED CURRENTS (TSC);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 10644237271     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.08.028     Document Type: Article

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