Investigation of quantum transport phenomena in resonant tunneling structures by simulations with a novel quantum hydrodynamic transport model

Institute of Physics Conference Series

Volumn 174, Issue , 2003, Pages 255-258

  Hontschel J ^a   Klix, W ^a   Stenzel, R ^a  

^a UNIVERSITY OF APPLIED SCIENCES DRESDEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; HYDRODYNAMICS; IONIZATION; PARTIAL DIFFERENTIAL EQUATIONS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS;

ENERGY FLUX DENSITY; GUMMEL ALGORITHM; QUANTUM HYDRODYNAMIC TRANSPORT MODEL; QUANTUM POTENTIALS;

RESONANT TUNNELING;

EID: 10444279221     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. C.L. Gardner: The Quantum Hydrodynamic Model for Semiconductor Devices. SIAM J. Appl. Math., vol. 54, no 2, pp. 409-427, (1994).
2. A.M.P.J. Hendriks, W. Magnus, and T.G. van de Roer: Accurate Modeling of the Accumulation Region of a Double Barrier Resonant Tunneling Diode. Solid-State Electronics, 39, pp. 703-712, (1996).