Accurate modelling of the accumulation region of a double barrier resonant tunnelling diode

Solid-State Electronics

Volumn 39, Issue 5, 1996, Pages 703-712

  Hendriks, A M P J ^a   Magnus, W ^b   Van De Roer, T G ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; CARRIER CONCENTRATION; COMPUTER SOFTWARE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; MATHEMATICAL MODELS; NUMERICAL METHODS; SEMICONDUCTOR DOPING; THREE DIMENSIONAL;

DOUBLE BARRIER RESONANT TUNNELLING DIODES; HAMILTONIAN; LOCAL DENSITY APPROXIMATION; ORTHOGONAL FUNCTIONS; POISSON EQUATION; WAVE FUNCTIONS;

TUNNEL DIODES;

EID: 0030150287     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00147-6     Document Type: Article

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